【详细教程】amd 内存修改gear1教程 时序 延迟

UniversalAMDFormBrowser:AMD平台高级bios设置工具，可以解锁BIOS修改BIOS内隐藏选项，实现amd笔记本超频、降压、修改时序等各类操作。需要解压放在FAT32的U盘下并关闭安全启动(Secure Boot设置disable，华硕机器设置Secure Boot control=disable）后，引导该U盘启动。

1. DDR—动态随机存储器 2. tRC（row cycle time） --行循环时间 3. tRCD-----从行有效到读/写命令发出之间的时间间隔 4. tRRD（Row active to Row active delay） --行激活到激活延迟时间 5. tCK---时钟周期 6. AL(Additive latency)---附加的潜伏期 7. RL(Read latency)---------- 读选通潜伏期 8. WL(write latency)------ 写选通潜伏期 9. CL（CAS Latency ）----列地址脉冲选通潜伏期 10. tAC（Access Time from CLK）-----时钟触发后的访问时间 11. BL (Burst Lengths)-----突发长度 12. tRP（Row Precharge command Period）-----行预充电有效周期 13. DQS----数据选取脉冲 14. Precharge---预充电 15. Refresh—刷新，AR(auto refresh),SR(self refresh) 16. DLL--延迟锁定回路

The DDR4 SDRAM is a high-speed dynamic random-access memory internally configured as sixteen-banks, 4 bank group with 4 banks for each bank group for x4/x8 and eight-banks, 2 bank group with 4 banks for each bankgroup for x16 DRAM. The DDR4 SDRAM uses a 8n prefetch architecture to achieve high-speed operation. The 8n prefetch architecture is combined with an interface designed to transfer two data words per clock cycle at the I/O pins. A single read or write operation for the DDR4 SDRAM consists of a single 8n-bit wide, four clock data transfer at the internal DRAM core and eight corresponding n-bit wide, one-half clock cycle data transfers at the I/O pins. Read and write operation to the DDR4 SDRAM are burst oriented, start at a selected location, and continue for a burst length of eight or a ‘chopped’ burst of four in a programmed sequence. Operation begins with the registration of an ACTIVATE Command, which is then followed by a Read or Write command. The address bits registered coincident with the ACTIVATE Command are used to select the bank and row to be activated (BG0-BG1 in x4/8 and BG0 in x16 select the bankgroup; BA0-BA1 select the bank; A0-A17 select the row; refer to “DDR4 SDRAM Addressing” on datasheet). The address bits registered coincident with the Read or Write command are used to select the starting column location for the burst operation, determine if the auto precharge command is to be issued (via A10), and select BC4 or BL8 mode ‘on the fly’ (via A12) if enabled in the mode register. Prior to normal operation, the DDR4 SDRAM must be powered up and initialized in a predefined manner. The following sections provide detailed information covering device reset and initialization, register definition, command descriptions, and device operation.

### FlightGear 中文手册知识点概览 #### 一、安装与配置 **1.1 安装场景** - **概述**：本章节介绍了在不同环境下安装FlightGear的准备工作及注意事项。 - **知识点**： - 不同操作系统下的安装流程差异（如...

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