Part Name
D331
Description
Silicon NPN Power Transistor
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Inchange Semiconductor
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D331 Datasheet - Inchange Semiconductor
Inchange Semiconductor
DESCRIPTION
• Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 50V(Min)
• Low Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.0V(Max) @IC= 2.0A
• Complement to Type 2SB515
• Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
• Especially suited for use in output stage of 10W AF power
amplifier.
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