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HA17358/A Series

HA17358/A Series

HA17358/A Series

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Description<br />

<strong>HA17358</strong>/A <strong>Series</strong><br />

Dual Operational Amplifier<br />

ADE-204-033 (Z)<br />

1st Edition<br />

July 2000<br />

<strong>HA17358</strong> series and <strong>HA17358</strong>A series are dual operational amplifier that provide high gain and internal<br />

phase compensation, with single power supply. They can be widely applied to control equipments and to<br />

general use.<br />

Features<br />

• Wide range of supply voltage, and single power supply used<br />

• Wide range of common mode voltage, and possible to operate with an input about 0 V, and output<br />

around 0 V is available<br />

• Frequency characteristics and input bias current are temperature compensated<br />

Features only for “A” series<br />

• Low electro-magnetic susceptibility level<br />

Vcc = +7.5 V<br />

Vee = −7.5 V<br />

Measurement Condition<br />

Rs<br />

Rs<br />

Rf<br />

0.01 μ<br />

Vin<br />

−10 dBm<br />

RF signal source<br />

(for quasi-RF noise)<br />

Rf<br />

−<br />

+<br />

V_<br />

Vout<br />

(= 100∗Vio)<br />

Output offset voltage (arb. unit)<br />

5.0<br />

4.0<br />

3.0<br />

2.0<br />

1.0<br />

0<br />

Output Offset Voltage vs. Input Interference<br />

<strong>HA17358</strong> series<br />

Improvement<br />

<strong>HA17358</strong>A series<br />

−1.0<br />

100E+3 1E+6 10E+6 100E+6 1E+9 10E+9<br />

Input RF frequency (Hz)<br />

Notice: The example of an applied circuit or combination with other equipment shown herein indicates<br />

characteristics and performance of semiconductor -applied products.<br />

The company shall assume no responsibility for any problem involving a patent caused when<br />

applying the descriptions in the example.


<strong>HA17358</strong>/A <strong>Series</strong><br />

Ordering Information<br />

<strong>HA17358</strong> <strong>Series</strong><br />

Type No. Application Package<br />

<strong>HA17358</strong> Commercial use DP-8<br />

<strong>HA17358</strong>F FP-8D<br />

<strong>HA17358</strong>A <strong>Series</strong><br />

Type No. Application Package<br />

<strong>HA17358</strong>APS Industrial use DP-8<br />

<strong>HA17358</strong>ARP FP-8DC<br />

<strong>HA17358</strong>AFP FP-8D<br />

2


Pin Arrangement<br />

Circuit Schematic (1/2)<br />

Vin(−)<br />

Vin(+)<br />

Vout1<br />

Vin(−)1<br />

Vin(+)1<br />

GND<br />

1<br />

2<br />

3<br />

4<br />

Q2 Q3<br />

Q1 Q4<br />

Q8 Q9<br />

1<br />

− +<br />

2<br />

+ −<br />

(Top View)<br />

C<br />

Q10<br />

Q11<br />

8<br />

7<br />

6<br />

5<br />

Q12<br />

V CC<br />

Vout2<br />

Vin(−)2<br />

Vin(+)2<br />

Q7<br />

Q5<br />

Q6<br />

Q13<br />

<strong>HA17358</strong>/A <strong>Series</strong><br />

R1<br />

Vout<br />

3


<strong>HA17358</strong>/A <strong>Series</strong><br />

Absolute Maximum Ratings (Ta = 25°C)<br />

Item Symbol<br />

Ratings<br />

<strong>HA17358</strong>/APS <strong>HA17358</strong>F/AFP/ARP Unit<br />

Supply voltage VCC 32 32 V<br />

Sink current Isink 50 50 mA<br />

Power dissipation PT 570 * 1<br />

385 * 2<br />

mW<br />

Common mode input voltage VCM –0.3 to VCC −0.3 to VCC V<br />

Differential input voltage Vin (diff) ±V CC ±V CC V<br />

Operating temperature Topr −20 to +75 −20 to +75 °C<br />

Storage temperature Tstg −55 to +125 −55 to +125 °C<br />

Notes: 1. This is the allowable values up to Ta = 50°C. Derate by 8.3 mW/°C.<br />

2. This is the allowable value up to Ta = 45°C mounting on 30% wiring density glass epoxy board.<br />

Derate by 7.14 mW/°C above that temperature.<br />

4


Electrical Characteristics (V CC = +15 V, Ta = 25°C)<br />

<strong>HA17358</strong>/A <strong>Series</strong><br />

Item Symbol Min Typ Max Unit Test Conditions<br />

Input offset voltage VIO — 3 7 mV VCM = 7.5V, RS = 50Ω, Rf = 50kΩ<br />

Input offset current I IO — 5 50 nA V CM = 7.5V, I IO = | I I (+) – I I (–) |<br />

Input bias current I IB — 30 250 nA V CM = 7.5V<br />

Power source rejection<br />

ratio<br />

PSRR — 93 — dB R S = 1kΩ, Rf = 100kΩ<br />

Voltage gain A VD 75 90 — dB R L = ∞, R S = 1kΩ, Rf = 100kΩ<br />

Common mode rejection<br />

ratio<br />

Common mode input<br />

voltage range<br />

Peak-to-peak output<br />

voltage<br />

CMR — 80 — dB R S = 50Ω, Rf = 5kΩ<br />

V CM (+) 13.5 — — V R S = 1kΩ, Rf = 100kΩ<br />

V CM (–) — — –0.3 V R S = 1kΩ, Rf = 100kΩ<br />

Vop-p — 13.6 — V f = 100Hz, R L = 20kΩ, R S = 1kΩ,<br />

Rf = 100kΩ<br />

+ –<br />

Output source current Iosource 20 40 — mA VIN = 1V, VIN = 0V, VOH = 10V<br />

– +<br />

Output sink current Iosink 10 20 — mA VIN = 1V, VIN = 0V, VOL = 2.5V<br />

– +<br />

Output sink current Iosink 15 50 — μA VIN = 1V, VIN = 0V,<br />

Vout = 200mV<br />

Supply current I CC — 0.8 2 mA V IN = GND, R L = ∞<br />

Slew rate SR — 0.2 — V/μs R L = ∞, V CM = 7.5V, f = 1.5kHz<br />

Channel separation CS — 120 — dB f = 1kHz<br />

5


<strong>HA17358</strong>/A <strong>Series</strong><br />

Characteristic Curves<br />

6<br />

Output source current Iosource (mA)<br />

Voltage gain A VD (dB)<br />

Output Source Current vs. Ambient Temperature<br />

80<br />

70<br />

60<br />

50<br />

40<br />

30<br />

20<br />

10<br />

0<br />

VCC = 15 V<br />

VOH = 10 V<br />

−20 0 20 40 60 80<br />

Ambeint temperature Ta (°C)<br />

Supply current I CC (mA)<br />

4<br />

3<br />

2<br />

1<br />

160<br />

120<br />

Supply Current vs. Supply Voltage<br />

Ta = 25°C<br />

0 8 16 24 32 40<br />

Supply voltage VCC (V)<br />

80<br />

40<br />

Voltage Gain vs. Supply Voltage<br />

Ta = 25°C<br />

R L = ∞<br />

0 8 16 24 32 40<br />

Supply voltage VCC (V)<br />

Input bias current I IB (nA)<br />

Input bias current I IB (nA)<br />

Maximum output voltage V OP-P (V)<br />

Input Bias Current vs. Ambient Temperature<br />

80<br />

70<br />

60<br />

50<br />

40<br />

30<br />

20<br />

10<br />

0<br />

VCC = 15 V<br />

VCM = 7.5 V<br />

−20 0 20 40 60 80<br />

Ambeint temperature Ta (°C)<br />

80<br />

60<br />

40<br />

20<br />

Input Bias Current vs. Supply Voltage<br />

Ta = 25°C<br />

0 8 16 24 32 40<br />

Supply voltage VCC (V)<br />

20<br />

16<br />

12<br />

8<br />

4<br />

Maxlmum Output Voltage vs. Frequency<br />

V CC = 15 V<br />

Ta = 25°C<br />

R L = 20 kΩ<br />

0<br />

1 k 3 k 10 k 30 k 100 k 300 k<br />

Frequency f (Hz)<br />

1 M


Voltage gain A VD (dB)<br />

120<br />

100<br />

80<br />

60<br />

40<br />

20<br />

Voltage Gain vs. Frequency<br />

<strong>HA17358</strong>/A <strong>Series</strong><br />

V CC = 15V<br />

Ta = 25°C<br />

R L = ∞<br />

0<br />

1 3 10 30 100 300 1 k 3 k 10 k 30 k 100 k 300 k 1 M<br />

Frequency f (Hz)<br />

Common mode rejection ratio CMR (dB)<br />

120<br />

100<br />

80<br />

60<br />

40<br />

20<br />

Common Mode Rejection Ratio vs. Frequency<br />

V CC = 15V<br />

Ta = 25°C<br />

R S = 50 Ω<br />

0<br />

100 300 1 k 3 k 10 k 30 k 100 k 300 k 1M<br />

Frequency f (Hz)<br />

7


<strong>HA17358</strong>/A <strong>Series</strong><br />

Solder Mounting Method<br />

1. Small and light surface-mount packages require spicial attentions on solder mounting.<br />

On solder mounting, pre-heating before soldering is needed.<br />

The following figure show an example of infrared rays refow.<br />

2. The difference of thermal expansion coefficeient between mounted substrates and IC leads may cause a<br />

failure like solder peeling or soler wet, and electrical characteristics may change by thermal stress.<br />

Therefore, mounting should be done after sufficient confirmation for especially in case of ceramic<br />

substrates.<br />

8<br />

Temperature<br />

140 to 160°C<br />

235°C Max<br />

≅ 60 s<br />

1 to 5°C/s<br />

10 s Max<br />

1 to 4°C/s<br />

Time (s)<br />

Figure 1 An Example of Infrared Rays Reflow Conditions


Package Dimensions<br />

9.6<br />

10.6 Max<br />

8 5<br />

1 4<br />

0.89 1.3<br />

6.3<br />

7.4 Max<br />

0.1 Min<br />

2.54 Min 5.06 Max<br />

2.54 ± 0.25 0.48 ± 0.10<br />

1.27<br />

1.27 Max<br />

4.85<br />

5.25 Max<br />

8 5<br />

1 4<br />

*0.42 ± 0.08<br />

0.40 ± 0.06<br />

*Dimension including the plating thickness<br />

Base material dimension<br />

4.4<br />

0.75 Max<br />

0.10 ± 0.10<br />

2.03 Max<br />

0.15<br />

0.12<br />

M<br />

*0.22 ± 0.05<br />

0.20 ± 0.04<br />

0° – 15°<br />

7.62<br />

Hitachi Code<br />

JEDEC<br />

EIAJ<br />

Mass (reference value)<br />

+ 0.25<br />

6.50 – 0.15<br />

1.05<br />

+ 0.25<br />

0.60 – 0.18<br />

Hitachi Code<br />

JEDEC<br />

EIAJ<br />

Mass (reference value)<br />

+ 0.10<br />

0.25 – 0.05<br />

0° – 8°<br />

<strong>HA17358</strong>/A <strong>Series</strong><br />

DP-8<br />

Conforms<br />

Conforms<br />

0.54 g<br />

FP-8D<br />

—<br />

Conforms<br />

0.10 g<br />

Unit: mm<br />

Unit: mm<br />

9


<strong>HA17358</strong>/A <strong>Series</strong><br />

10<br />

0.75 Max<br />

1.27<br />

4.90<br />

5.3 Max<br />

8 5<br />

1 4<br />

*0.42 ± 0.08<br />

0.40 ± 0.06<br />

*Dimension including the plating thickness<br />

Base material dimension<br />

3.95<br />

+ 0.11<br />

– 0.04<br />

0.14<br />

1.75 Max<br />

0.15<br />

0.25<br />

M<br />

*0.22 ± 0.03<br />

0.20 ± 0.03<br />

6.10 + 0.10<br />

– 0.30<br />

1.08<br />

+ 0.67<br />

0.60 – 0.20<br />

Hitachi Code<br />

JEDEC<br />

EIAJ<br />

Mass (reference value)<br />

0° – 8°<br />

FP-8DC<br />

Conforms<br />

—<br />

0.085 g<br />

Unit: mm


Cautions<br />

<strong>HA17358</strong>/A <strong>Series</strong><br />

1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,<br />

copyright, trademark, or other intellectual property rights for information contained in this document.<br />

Hitachi bears no responsibility for problems that may arise with third party’s rights, including<br />

intellectual property rights, in connection with use of the information contained in this document.<br />

2. Products and product specifications may be subject to change without notice. Confirm that you have<br />

received the latest product standards or specifications before final design, purchase or use.<br />

3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,<br />

contact Hitachi’s sales office before using the product in an application that demands especially high<br />

quality and reliability or where its failure or malfunction may directly threaten human life or cause risk<br />

of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,<br />

traffic, safety equipment or medical equipment for life support.<br />

4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly<br />

for maximum rating, operating supply voltage range, heat radiation characteristics, installation<br />

conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used<br />

beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable<br />

failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes,<br />

so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other<br />

consequential damage due to operation of the Hitachi product.<br />

5. This product is not designed to be radiation resistant.<br />

6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without<br />

written approval from Hitachi.<br />

7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor<br />

products.<br />

Hitachi, Ltd.<br />

Semiconductor & Integrated Circuits.<br />

Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan<br />

Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109<br />

URL NorthAmerica : http://semiconductor.hitachi.com/<br />

Europe : http://www.hitachi-eu.com/hel/ecg<br />

Asia : http://www.hitachi.com.sg/grp3/sicd<br />

Japan : http://www.hitachi.co.jp/Sicd/indx.htm<br />

For further information write to:<br />

Hitachi Semiconductor<br />

(America) Inc.<br />

179 East Tasman Drive,<br />

San Jose,CA 95134<br />

Tel: (408) 433-1990<br />

Fax: (408) 433-0223<br />

Hitachi Europe GmbH<br />

Electronic Components Group<br />

Dornacher Stra§e 3<br />

D-85622 Feldkirchen, Munich<br />

Germany<br />

Tel: (89) 9 9180-0<br />

Fax: (89) 9 29 30 00<br />

Hitachi Asia Ltd.<br />

16 Collyer Quay #20-00<br />

Hitachi Tower<br />

Singapore 049318<br />

Tel: 535-2100<br />

Fax: 535-1533<br />

Hitachi Asia (Hong Kong) Ltd.<br />

Group III (Electronic Components)<br />

7th Flr, North Tower, World Finance Centre,<br />

Harbour City, Canton Road, Tsim Sha Tsui,<br />

Kowloon, Hong Kong<br />

Tel: (2) 735 9218<br />

Fax: (2) 730 0281<br />

Hitachi Europe Ltd.<br />

Electronic Components Group.<br />

Whitebrook Park<br />

Lower Cookham Road<br />

Maidenhead<br />

Berkshire SL6 8YA, United Kingdom<br />

Tel: (1628) 585000<br />

Fax: (1628) 585160<br />

Hitachi Asia Ltd.<br />

Taipei Branch Office<br />

3rd Flr, Hung Kuo Building, No.167,<br />

Tun Hwa North Road, Taipei (105)<br />

Taiwan<br />

Tel: (2) 2718-3666<br />

Fax: (2) 2718-8180<br />

Telex: 23222 HAS-TP<br />

Telex: 40815 HITEC HX<br />

Copyright ' Hitachi, Ltd., 2000. All rights reserved. Printed in Japan.<br />

Colophon 1.0<br />

11

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